Abstract
The effect of an external magnetic field on the dark current of photodiodes in far-IR matrix photodetector arrays fabricated by boron ion implantation into heteroepitaxial cadmium mercury telluride (CMT) layers has been studied. A new method is proposed for separately determining the lateral and normal dark current components in CMT photodiodes of the matrix photodetectors. It is established that the dark current of these photodiodes (at 77 K) with dimensions comparable with the minority carrier diffusion length is determined primarily by the lateral component.
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