Abstract
ABSTRACTWe proposed a concise and novel scheme to determine the crystallographic misorientation of heteroepitaxial structures. In addition to subtle high-resolution transmission electron microscope images, the information revealed from selected-area diffraction patterns at the interfaces offers another path to determine the angles of misorientations. The principle is to extract the basically three-dimensional misorientation information from a two-dimensional selected-area diffraction pattern through the employment of the Laue circle
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