Determination of Young’s moduli of 3C (110) single-crystal and (111) polycrystalline silicon carbide from operating frequencies

Abstract

This manuscript presents a Young’s moduli analysis by folded-beam and straight-beam MEMS-based 3C silicon carbide (SiC) lateral resonators via finite element modeling. The modeling yields the ranges of the Young’s modulus of (110) single-crystalline and (111) polycrystalline 3C–SiC resonators. This investigation considers the geometric variation of support beams as determined by scanning electron microscope (SEM) micrography. The Young’s moduli of single-crystalline (110) and polycrystalline (111) 3C–SiC folded-beam resonators are estimated to be 337–386 GPa and 353–409 GPa by software modeling. The residual stress was 44 MPa for polycrystalline SiC. These results reveal that crystal orientation may be more important than crystallization in determining the Young’s modulus of 3C–SiC.