Abstract
An experimental method is presented to determine the valley splitting in n-channel Si inversion layers. The method is an extension of the “tilted field” experiment under conditions, where the valley splitting is resolved at all tilt angles. In the framework of Ohkawa and Uemura's theory, the bare splitting as well as the effective exchange interaction are obtained directly from the angles of coincidence. The bare valley splitting in the samples investigated is 0.15 meV/10 12 cm -2 · n s . Using experimentally determined parameters we have calculated the oscillatory conductivity σ xx in a simplified version of Ohkawa and Uemura's model. The calculated curves reproduce the detailed structure of the experimental data for the various tilt angles of the experiment.
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