Abstract
A magnetic tunnel junction (MTJ) is an integral component of spintronic devices like complex magnetic sensor and magnetic random access memory (MRAM) etc. This significance motivated to design an MTJ using Heusler alloy Co2TiAl and MgO as barrier layer. In order to check the suitability of Heusler alloy its structural, electronic and magnetic characteristics are investigated. Band structures and density of states are determined by GGA and GGA + mBJ approaches. Curie temperature is assessed using mean field approximation (MFA). After confirming the suitability, three different MTJs are designed and calculations are carried out using Quantum Espresso (QE) code. The tunnelling magneto-resistance (TMR) is determined through ballistic conductance for both spins (up and down) in parallel and antiparallel configurations. The calculated values of TMR are reasonably high and comparable with literature. It is envisaged that the findings of this work will be helpful in the fabrication of MTJ for spintronic devices.
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