Abstract
The technique of frequency-dependent measurement of photoconductivity is described and its advantages for the determination of trapping dynamics in semiconductors over the conventional time-domain methods are pointed out. Results are presented for the frequency dependence of detrapping in two samples of semi-insulating GaAs, one with Cr doping and one undoped. Three distinguishable trapping processes are found in the undoped sample and up to four in the Cr-doped one, all showing slight to strong deviations from the Debye shape, corresponding to exponential time development. The physical implications of these deviations from the exponential time dependence are briefly discussed.
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