Abstract
Abstract In the present paper concentration of traps ( N t ) and trap depth ( E t ) have been calculated by thermally stimulated current (TSC) measurements in amorphous Se 70 Te 30− x Zn x ( x =2, 4) thin films. These measurements are carried out at three different heating rates. It is observed that the amount of thermally stimulated current gradually increases and the temperature ( T m ), at which maxima in TSC occurs, shifts to higher temperatures with increasing heating rates ( β ) as expected. The trap depth is found to be quite different for x =2 and x =4. The concentration of traps also increases slightly at higher concentration of Zn.
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