Abstract
The way how to determine trap concentrations and discrete trap energy levels in insulators and semiconductors from the experimental j(U) (current density-voltage) characteristic of one-carrier steady-state space-charge-limited currents measured at constant temperature is described. The procedure of the experimental j(U) characteristic evaluation is presented. The analysis of the trap parameter errors is carried out and the requirements for the accuracy of measurements are deduced. [Russian Text Ignored].
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
