Abstract
We have measured the reflectivity in the spectral range 0.02–2.5 eV and the Hall resistivity up to 150 kilogauss of samples of electrodeposited amorphous Ni-P at room temperature. Analysis of the infrared data show that the density of states and inverse scattering time (1/τ) both decrease as P content is increased from 15 to 26 at. %. This result is consistent with rigid band models predicting d-band filling in this P concentration range. Hall measurements are complicated by magnetic enhancements which cause the Hall coefficient to change signs at about 23 at. % P. Measurements in the lowest concentration sample where separation of classical and anomalous Hall effect is possible indicate that the carriers are electron-like (negative classical Hall coefficient). The best quantitative estimates still imply a factor of 5 discrepancy between the IR and Hall determination of carrier density of states.
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