Abstract
A careful study of excitonic lines in the photocurrent spectra of GaAs-${\mathrm{Al}}_{0.25}$${\mathrm{Ga}}_{0.75}$As multiple-quantum-well structures grown by molecular-beam epitaxy is carried out for wells having widths in the range 35--245 A\r{}. Transition energies and relative oscillator strengths are measured and compared with theoretical values obtained using a multiband effective-mass approach, and excellent agreement between experimental data and theory is found. A large number of transitions, as many as 13 excitons of both allowed and forbidden types, are identified and their anomalously large oscillator strengths are shown to be the result of strong mixing of valence subbands.
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