Abstract
AbstractWe present x-ray diffraction based methods to quantitatively determine the wurtzite content of nanowire ensembles and to investigate the effect of twinning. An increased lattice constant in growth direction is found for all investigated InAs and InP nanowire samples. This increase is independent of the wurtzite content. Using x-ray pole figures we find that twinning is present in GaAs/Si branched nanowires, which leads to 60° rotations of the lattice.
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