Determination of the types of optical transitions and concentrations of donors and acceptors in GaN by the dependence of photoluminescence intensity on the excitation power

Abstract

The results of the calculated and experimental depen-dence of the photoluminescence intensity on the excitation power density for silicon-doped GaN layers grown by molecular beam epitaxy are presented. A model was constructed for transitions in a compensated semiconductor upon interband generation of electron-hole pairs. It is shown that the dependence of the photoluminescence intensity on the excitation power density can be used to determine the recombination mechanism and concentrations of donors and acceptors in semiconductor. Keywords: GaN, ammonia-MBE, photoluminescence, heterostructures, point defects.