Abstract
A nondestructive method for measuring the thicknesses of epitaxial layers of AlxIn1 − xSb alloys based on interference effects in reflectance spectra measured in a wide wavelength range (1–28 μm) is implemented. The studied 0.9–3.3 μm thick AlxIn1 − xSb layers are grown on highly lattice-mismatched GaAs substrates by molecular beam epitaxy. The found thicknesses are in good agreement with the independent data of scanning electron microscopy. The spectral dependence of the refractive index n(E) of AlxIn1 − xSb layers is measured both for the regions of transparency and fundamental absorption. The refractive index for the case of E E0 are found based on the interference pattern.
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