Abstract
The thickness and refractal index of the diluted magnetic semiconductor (DME) Hg1-x-yCdxMnyTe thin films grown on Cd1-zMnzTe substrate by close-spaced isothermal vapor phase epitaxy (ISOVPE) technique had been determined by the method of fitting the theoretical infrared transmission spectrum to the experimental data. The range of the film thickness was 5 - 30 micrometers and the indexes were around 3.5, depending upon the compositions. The index of Cd1-xMnzTe was also obtained by the combination of mechanical thinning and optical measurements, which changes from 2.71 (z equals 0.1) to 2.88 (z equals 0.6), and compared with those of related II-VI materials, CdTe and HgCdTe. The method was verified by scanning electron microscope data. It is non-destructive, simple, and effective, and can be routinely used in thin film material characterization.
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