Abstract
The electronic properties of epitaxial layers of InNxSb1−x grown on GaAs (001) substrates have been investigated using high-resolution electron-energy-loss spectroscopy (HREELS), Hall measurements and band structure modelled by a modified k·p Hamiltonian. The chemical composition of the epitaxial layers was found to be InN0.02Sb0.98 from secondary ion mass spectrometry (SIMS). However, electrical measurements and band structure calculations indicate a band gap of 135 meV, thus entailing an epilayer composition of InN0.0015Sb0.9985 , indicating that approximately 7.5% of the nitrogen present is electrically active, being located substitutionally on antimony lattice sites. Hall measurements and simulations of HREEL spectra imply a much larger effective mass at the Fermi level than a conventional Kane band structure material with an equivalent band gap.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
