Abstract
The compositional distribution in a self-assembled InAs(P) quantum wire grownby molecular beam epitaxy on an InP(001) substrate has been determined byelectron energy loss spectrum imaging. We have determined the strain and stressfields generated in and around this wire capped with a 5 nm InP layer by finiteelement calculations using as input the compositional map experimentally obtained.Preferential sites for nucleation of wires grown on the surface of this InP capping layerare predicted, based on chemical potential minimization, from the determinedstrain and stress fields on this surface. The determined preferential sites for wirenucleation agree with their experimentally measured locations. The method used inthis paper, which combines electron energy loss spectroscopy, high-resolutionZ contrast imaging, and elastic theory finite element calculations, is believed to be a valuabletechnique of wide applicability for predicting the preferential nucleation sites of epitaxialself-assembled nano-objects.
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