Abstract
The noise temperature dependence on the electric field in an AlInAs/GaInAs-HEMT heterostructure has been measured. It was found that the dependence of the noise temperature on the electric field in GaAs-MESFETs and in AlInAs/GaInAs-HEMTs is remarkably different. For this reason a different model must be used for AlInAs/GaInAs-HEMTs. Based on the measured noise temperature dependence on the electric field, an analytic noise model for the AlInAs/GaInAs HEMT has been developed. The noise source parameters were calculated and compared with extracted noise source parameters from noise measurements.
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