Abstract
The lowest resonant-state energy, E 0, of an In 0.53Ga 0.47As/In 1− x Al x As (0.48≤ x≤1) pseudomorphic resonant tunneling barrier structure was determined by the temperature dependence of thermionic emission current through this resonant state. Using this value of E 0, the conduction band discontinuity, Δ E c, of the heterointerface was determined by a calculation accounting for both the band nonparabolicity and the strain. Δ E c increased linearly with the A1As mole fraction, x. For an In 0.53Ga 0.47As/A1As resonant tunneling barrier (RTB), we have determined the value of Δ E c to be about 60% of the energy band gap discontinuity.
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