Abstract
After a metal-oxide-semiconductor capacitor (MOS-C) is derived towards deep depletion by the application of a depletion voltage step on its gate, the transients relaxing to equilibrium can be used to investigate the generation characteristics of surface space-charge region of the semiconductor. It has been proved that not only may the average bulk generation lifetime be extracted, but also its profile can be determined. We have suggested two methods of determining the profile of the bulk generation lifetime in this paper. The surface generation and field-enhanced generation have been ignored in analysis, therefore, it is important that the samples have low interface-state density and undergo rather low voltage steps in experiments in order to achieve reasonable and reliable results.
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