Abstract
The Poisson ratio \ensuremath{\nu} of In${}_{2}$O${}_{3}$ has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO${}_{2}$ substrates. The experimental results are in good agreement with values for \ensuremath{\nu} calculated using atomistic simulation procedures.
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