Abstract
A new method for determination of pH pzc from capacitance–voltage characteristics of MIS and EIS structures is suggested. The obtained values of the pH pzc (2.5±0.3 for SiO 2, 2.8±0.3 for Ta 2O 5, 3–3.4 for Si 3N 4 films) agree well with results obtained from flat-plate streaming potential measurements.
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