Abstract
A method for determining the concentration and electron-impact excitation cross section of activated emission centers in the phosphor layer of a thin-film electroluminescent capacitor structure, based on measurements of the brightness as a function of the applied alternating voltage amplitude and frequency, is analyzed. The error of determination of the parameters of electroluminescence excited by alternating-sign ramp voltage is evaluated. The parameters of electroluminescent structures based on the ZnS:Mn, ZnS:TbF3, and ZnS:SmF3 films are presented.
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