Abstract
Deep levels were determined in GaP light-emitting diodes using the differential coefficients of the current-voltage characteristics. The parameters determined by different methods showed agreement. The measurement conditions are such that the measurements can be made using wafers, which makes the proposed methods extremely promising.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.