Abstract
The asymmetrical bending of the stacking fault fringes in the dark-field large angle convergent beam electron diffraction patterns is reported and utilized to determine the sense of the stacking fault. A stacking fault pyramid in GaAs is studied by analysing the enteraction between the stacking fault and the diffraction lines in the LACBED patterns so as to determine the intrinsic/extrinsic stacking faults and the displacement vector R.
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