Abstract
Values of Penn gap energies have been calculated, following the method of Levine 1 , for the amorphous silicon alloy systems a-Si 1-y Ge y , a-Si 1-y N y and a-Si 1-y O y . The values for the ordered (OBN) and random (RBN) network models show large differences for the oxide and nitride systems, especially at large values of y where discrepancies of about 5 eV are obtained. A difference of only about 0.1 eV, however, is obtained for a-Si 1-y Ge y for the two models. Penn gaps have been obtained experimentally using plasmon energies (from XPS) and static refractive indices of samples from each of these alloy systems over a wide composition range. These indicate the existence of ordered bonding in the oxide and nitride systems but cannot be used to predict random bonding in a-Si 1-y Ge y . Independent support for the bonding appropriate in each of these systems has been obtained from EXAFs data, taking into consideration both partial co-ordination numbers and the mean square deviation in bond lengths.
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