Abstract
ABSTRACTPhotoluminescence (PL) experiments performed on bulk ZnO crystals are used to establish the ionization energy of the substitutional nitrogen acceptor. The temperature dependence of the nitrogen-related electron-acceptor (e,A°) emission band has been monitored in as-grown single crystals. A lineshape analysis of this band is used to determine the acceptor ionization energy. The temperature variation of the ZnO band gap was included in our analysis and the low-temperature acceptor ionization energy for substitutional nitrogen at an oxygen site in ZnO was found to be EA = 209 ± 3 meV. Electron paramagnetic resonance and Hall-effect measurements were also used to characterize these bulk ZnO samples.
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