Determination of the Impurity Element Gallium in the Metallic Aluminum Products such as Aluminum and Aluminum Alloy by ICP-OES

Abstract

Applying the appropriate ratio of hydrochloric acid and nitric acid mixed solvents, the aluminum and aluminum alloy products were completely digested, and then the digestion solution was diluted with water to a constant volume, and directly using inductively coupled plasma atomic emission spectrometry (ICP-OES) to test Ga and the content of which is from 0.005 to 1.0%. This paper has examined the effect of high aluminum matrix and coexisting elements on the interference of testing micro gallium, and by optimizing the parameters of the instrument detection such as gallium analytical line, detection integration region and synchronization background correction position, etc., effectively eliminated the spectral interferences of coexistence impurity elements. The method have optimized instrument working conditions of the plasma emission spectrometer, and taken matrix matching and synchronization background correction combination of technical measures to eliminate the matrix effect of aluminum products. The method is simple and practical, easy to operate, and avoid the complicated chemical separation and enrichment procedures, with fewer steps, shorter inspection cycle, wide detection range, high precision and accuracy. The results of the method for the determination of the gallium in the aluminum and aluminum products show that: the detection limit of 0.0002%, the background equivalent concentration of 0.00004% and the RSD is less than 2%, the recoveries is from 96.0% to 104.0%.