Abstract
Area selective epitaxy of GaAs on GaAs substrates masked by SiO2 has been investigated using migration-enhanced epitaxy (MEE) with 2 s annealing after Ga deposition. By this method, successful area selective epitaxy of GaAs has been achieved at substrate temperatures around 590°C. We have carried out area selective epitaxy of GaAs on GaAs substrates of various surface indices. Side facets are found to be composed of vertical {110} facets when epitaxial growth is carried out on GaAs (n11)A substrates, and composed of inclined {n20} facets when GaAs (n11)B substrates are used. It is determined that the growth rates of A- and B-surfaces are the most important factors in the facet index determination.
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