Abstract
The experimental and theoretical results of a study of the electronic structure of InAs/GaAs pyramidal quantum dots are compared. We use an analytical approach to determine the strain distribution and consequent carrier confinement potential changes in InAs dots buried in a GaAs matrix. A wetting pre-layer of 1.7 monolayers is considered in the calculations. The calculated hydrostatic and biaxial strain values agree with those reported in the literature. Using the relevant calculated parameters, the Schrodinger equation is solved numerically, without inclusion of the piezoelectric and Coulomb interaction effects. The calculated energy eigenvalues and transition energies of the dots studied agree with our own experimental values and with those reported by others in the literature.
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