Abstract
An experimental method has been developed for determining the energy relaxation time /tau//sub /epsilon// of electrons in fields exceeding the threshold for the Gunn effect in n-GaAs. The starting data for calculating /tau//sub /epsilon// are the measured values of the conductivity of the sample in the 4-mm-wavelength range. The method makes it possible to follow, after computer analysis of the data, the effect of different external actions on the high-frequency properties of the semiconductor.
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