Abstract
Infrared reflectivity and Hall effect measurements were performed on highly conducting n-type GaN (n≊6×1019 cm−3) bulk crystals grown by the high-pressure high-temperature method. Values of electron-plasma frequency and free-electron concentration were determined for each sample of the set of seven crystals. It enabled us to calculate the perpendicular effective mass of electrons in the wurtzite structure of GaN as m*=0.22±0.02 m0. Effects of nonparabolicity and a difference between parallel and perpendicular components of the effective mass are small and do not exceed the experimental error.
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