Determination of the Drain Saturation Voltage of a Metal–Oxide–Semiconductor Field-Effect Transistor by the Capacitance–Voltage Method

Abstract

In this paper, we present a simple technique to extract drain saturation voltage using the drain junction capacitance–voltage data of a metal–oxide–semiconductor field-effect transistor (MOSFET). When voltage is applied to the gate terminal, the drain and source are connected electrically via a surface inversion charge, and drain junction capacitance increases. When drain voltage increases, the pinch-off occurs at the drain end of the channel, and drain junction capacitance is rapidly reduced. Through this phenomenon, we can extract the drain saturation voltage directly from the drain junction capacitance–voltage curve without using complex mathematical formulas.