Abstract
Considering the gallium phosphide (GaP) semiconductors doped with sulfur (S) and zinc (Zn) acceptors, we have studied the behavior of Huang-Rhys factor S theor as a function of the donor–acceptor (D–A) pair separation R. It turned out that the form of the bands — broad or narrow — that are attributed to (D–A) recombination, depends on the values of the pair separation — large or small, respectively. More specifically for R=0.5 nm we obtain S theor =0.117 and for R=3.5 nm, S theor =3.616. The above values of the factor S impose sub-Poissonian (with ℏω=49.97 meV) and super-Poissonian (with ℏω=78 meV) distribution shapes on the bands.
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