Determination of the diffusion length from defect contrast by SEM-EBIC

Abstract

Abstract The diffusion length (L) of minority carriers was determined from contrast of linear defects. Dislocation contrast was measured by EBIC at room temperature versus bias of a Schottky diode. It was shown for the first time that the slope of the contrast curves depends on L. The requirement to the SEM regime and EBIC geometry were formulated in a way to avoid influence of surface recombination on the measurements and diminish the role of other side effects as well.