Abstract
The density of states between the Fermi level and the conduction band in glow-discharge a-Si:H has been determined by measuring thermostimulated currents and photo-currents simultaneously. During the TSC measurements the sample is exposed to light pulses of low intensity. From the measurements both g(E) and the μτ product can be calculated. Results are shown from samples grown at different glow-discharge powers. Minimum values of g(E) at 0.3 eV below E c range from 10 16 to 10 17 eV −1 cm −3.
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