Abstract
A new method of measuring the Curie temperature of a single nanowire located on the surface of an insulating substrate has been proposed. The method is based on the analysis of the current-voltage characteristics of the nanowire obtained at different initial temperatures of the sample. A maximum is observed on the dependence of the first derivative of the resistance on the applied power, the position of which is shifted to lower powers with increasing initial temperature. The Curie temperature is determined graphically as the temperature at zero power. The Curie temperature of a nickel nanowire formed on a SiO2/Si surface by the scanning probe lithography method has been measured. The critical current density at which the transition from the ferromagnetic to the paramagnetic state occurs has been determined.
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