Abstract
New methods for determining the “correlation length” for thickness fluctuations of a thin insulator film from data obtained in measurements of the electrical characteristics of MIS tunnel structures, i.e., without the use of microscopy, have been suggested and tested. One of these methods relies on statistical processing of electric current data for a random sample of structures. The other technique analyzes abrupt downward changes in current, observed in tests of devices under a sufficiently high bias. The methods have been tested on Al/SiO2/Si tunnel structures. The resulting estimates of the characteristic scale of thickness fluctuations are compared with the data obtained in direct measurements of this scale for the same oxide layers.
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