Abstract
ABSTRACTThe reduction of the active cell size to the nanoscale is crucial for the improvement of the phase change memory devices (PCM) based on Ge-Sb-Te (GST) alloys. The self-assembly of Au catalyzed Ge1Sb2Te4 (GST-124) nanowires (NWs) has been achieved by metal organic chemical vapor deposition. The atomic arrangement of the NWs has been investigated and the stacking sequence has been identified, by combining the direct observation by High Angle Annular Dark Field (HAADF) imaging and simulations. It has been assessed that Ge and Sb atoms can randomly occupy the same sites in the crystal lattice, despite the adverse predictions of the theoretical models elaborated for the bulk material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
