Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering

Abstract

Subband energy levels of AlGaAs double quantum well (QW) layer structure with a separate confinement scheme are determined by photoreflectance at room temperature. Also subband energy levels are compared with those determined by the self-excited electron Raman scattering of lasers fabricated from the same QW structure but with different waveguide thickness outside the QWs. Electron subbands, heavy hole subbands, light hole subbands, determined both measurements, are in good agreement.