Abstract
Stress and stress profiles in GaAs and InP heteroepitaxial films grown on Si substrates have been studied by means of laser beam modulation spectroscopy. The experiments have been performed using the 5145 A line of an Ar laser (20–500 µm in diameter) as a modulation beam source in measurements of modulated reflectance spectrum ΔR/R. The optical method presented is found to be useful for precise evaluation of stress and stress distribution profiles in heteroepitaxially grown semiconductor films.
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