Abstract
AbstractInP wafers were ion‐beam‐etched using different energies. The damaged surfaces were investigated by ellipsometry at different angles of incidence as a function of wavelength. Penetration depths and changes in refractive indices nD – iKD are shown. Si3N4− coated sputter‐etched InP wafers are also measured with multiple angle of incidence (MAI) ellipsometry. Coatings are removed step by step by wet chemical etching, and MAI ellipsometry is carried out after each step. The results are fitted to the model InP/sputter‐damaged layer/Si3N4. The parameters for the damaged layers are given.
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