Abstract
We report the determination of the intrinsic spin‐orbit interaction (SOI) parameters and phase coherence times for In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) from the analysis of the weak antilocalization (WAL) measurements at dilution temperatures. We find that the Dresselhaus SOI is mostly negligible in this system and that the intrinsic parameters for the Rashba effect, aSO≡α/<Ez> is determined quantitatively to be aSOm*/me = (1.46–1.51×10−17NS[m−2])eÅ2, where NS is the sheet carrier density. We also provide the values of the phase coherent time τφ extracted from the WAL analysis and the transport mobility μ obtained from the Hall and Shubnikov‐de Haas (SdH) measurements.
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