Determination of sp 3/sp 2 ratio in amorphous-carbon thin film synthesized by reactive filtered arc deposition

Abstract

The application of a silicon on insulator device in a high-power integrated circuit is limited by the self-heating effect caused by the poor thermal conductivity of the buried SiO 2. We introduce tetrahedral amorphous-carbon thin films formed by reactive filtered arc deposition method, as an alteration. The sp 3/sp 2 components in the thin films and the surface roughness were measured by spectroscopic ellipsometry, which is a well known non-destructive and in situ characterization method. The dielectric functions of the composite materials were calculated using the Bruggeman effective medium approximation.