Abstract
ABSTRACTBy measuring the low frequency current amplification factor and the hybrid parameters in the common emitter configuration a sufficiently accurate method of evaluating some physical parameters of a uniform base alloy junction transistor is described. By plotting h12e versus h22e/Ie an accurate method of evaluating the junction temperature and by measuring the applied base emitter voltage at various emitter currents, a new method of evaluating the conducting cross-section are given. The transition capacitances at both emitter and collector junctions are also calculated. The method is applicable at low injection levels only.
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