Abstract
The paper presents the acoustic method for determining some parameters of fast surface states in semiconductors. This method uses the interactions of the phonon{electron type for determining both the efiective carrier lifetime ? in∞uenced by the fast surface energetic states and the velocity g of the carrier trapped by the surface states. Some experimental results of the parameters ? and g in near-surface region of real Si(111) samples for their various surface treatments, obtained by the ofiered method, are presented.
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