Abstract
P-SnO/n-Si heterojunctions were constructed by using e-beam evaporation in combination with ultra-violet lithography technique. The current-voltage and capacitance-voltage characteristics of the pn heterojunctions were systematically investigated, through which the diode parameters, such as the turn-on voltage, forward-to-reverse current ratio, series resistance, ideality factor, and build-in voltage, were also determined. In particular, the pn heterojunctions presented a relatively good electrical rectifying behavior, with a forward-to-reverse current ratio up to 58 ± 5 at ±2.0 V. The relative permittivity and work function of the SnO films were measured to be 18.8 ± 1.7 and 4.3 eV, respectively. The energy band diagram of the heterojunctions was depicted in detail, which can interpret the rectifying behavior very well.
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