DETERMINATION OF SLIP PLANES IN CdxHg(1-x)Te BY ETCHING OF DISLOCATIONS INTRODUCED BY MICROHARDNESS INDENTATIONS

Abstract

The importance of CdxHg(1-x)Te (CMT) for intra-red detector applications has stimulated interest in the mechanical and electrical properties of this material. Whereas considerable effort has been employed in the study of the electrical properties of this material, very little information has been published on the mechanical properties and, in particular, the slip system and dislocation properties. Most reported dislocation etches for CMT only reveal dislocation etch-pits within about 20° of the {111} orientation. A dislocation etchant which reveals dislocations on all orientations has been reported for HgTe, and it has been shown in our laboratories that this is effective also on most low index planes of CMT. Dislocation rosettes introduced at room temperature by Vickers microhardness indentation have been studied using the above etchant on two differently oriented faces. It is concluded that the operative slip planes are {111}. These studies are discussed and compared with reported work on CdTe.