Abstract
A procedure for analyzing high-purity arsenic by atomic emission spectrometry (AES) was proposed that provides the preconcentration of silicon and other nonvolatile impurities in a crater of a graphite electrode using matrix distillation from 2-g sample portions as As2O3 . The procedure is characterized by a low correction for the blank experiment. The detection limit for silicon was 4 × 10–7 wt %.
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