Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

Abstract

The interface characteristics of graphene/n-type Si samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable Schottky barrier value. For graphene/n-type Si samples with (without) sulfide treatment, the Schottky barrier height is 0.86 (0.78)eV. The Schottky barrier height was increased from 0.78 to 0.86eV, indicating that sulfide treatment is effective in passivating the surface of Si (owing to the formation of Si–S bonds). To determine the Fermi-level pinning/unpinning at the graphene/n-type Si interfaces with sulfide treatment, an analysis is conducted according to the Schottky–Mott limit and the actual work function of graphene is examined with the Kelvin probe. It is shown that the Fermi energy level is unpinned and the Schottky barrier value is dependent on the work function of graphene. Investigation of graphene/n-type Si interfaces is important, and providing the other technique for surface potential control is possible.