Abstract
We have investigated the relative quantum efficiency in a series of InGaN∕GaN single quantum wells with differing indium concentration. The results of measurements involving direct detection of phonons emitted as a result of nonradiative recombination and carrier energy relaxation are compared with time-resolved photoluminescence studies. Using these complementary techniques we have extracted the low-temperature internal quantum efficiency of the recombination and observed the effect of free-carrier screening on the radiative and nonradiative processes in the quantum well samples. All the samples exhibit high quantum efficiency, with the maximum being observed in the 10% indium sample. In addition, we observe the appearance of a delayed phonon signal, which we correlate to the measured quantum efficiency of the samples.
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